Set of Diploma Courses I: Physics of Semiconducting Materials Field of study: Physics
Programme code: W4-S2FZA22.2022

Module name: Set of Diploma Courses I: Physics of Semiconducting Materials
Module code: W4-2F-22-16
Programme code: W4-S2FZA22.2022
Semester:
  • summer semester 2024/2025
  • summer semester 2023/2024
  • summer semester 2022/2023
Language of instruction: English
Form of verification: exam
ECTS credits: 4
Description:
Brief introduction to the crystallographic, electronic structure and lattice dynamics of the most widely used semiconductors and their alloys. Example of some important crystallographic structures for semiconductors: diamond and zinc blende structure. Covalent bonds in semiconductors, the nature of sp3 hybridization for the group IV semiconductor. Electronic defect state, thermodynamics of point defects (Schottky and Frenkel disorder), extended defects. Concentration of carriers as a function of temperature; Fermi distribution/Boltzmann distribution. Intrinsic and doped semiconductors in equilibrium. The role of donors or acceptors at low doping levels. Compensation and amphoteric impurities. Change of the band structure due to high levels of doping. Diffusion of carriers: Fick's first law, Einstein-Smoluchowski relation. Phenomena of electrical transport for intrinsic and doped semiconductors. Mobility of electrons and holes - Hall mobility. Generation and recombination processes. Dependence of the lifetime of the generated carriers on scattering processes. Hetero structure, space charge model. Band bending due to the existence of the surface state. Schottky model of metal-semiconductor contact and metal-oxide-semiconductor interface (solution by Poisson equation). "p-n" junction: an ideal case (solution using Poisson's equation). Determination of the current-voltage characteristics of an ideal p-n junction for forward and reverse current for the electrons and the holes. Applications of semiconductors in nanoelectronics: an example of the use of extended defects and phase change materials for 1 TB resistively switching RAM-s; a concept developed at the Forschungszentrum Juelich and Institute of Physics University of Silesia. Learning objectives: To learn the basics of semiconductor physics and the various technical applications of semiconductor materials. Mandatory examinations
Prerequisites:
Knowledge of the basics of solid-state physics.
Key reading:
(no information given)
Learning outcome of the module Codes of the learning outcomes of the programme to which the learning outcome of the module is related [level of competence: scale 1-5]
It presupposes an in-depth knowledge of the physics of the condensed phase [2F_16_1]
 KF_W04 [4/5]
It requires knowledge of mathematical formalism, which is useful in the construction and analysis of physical models of medium complexity and an understanding the consequences of using approximation methods [2F_16_2]
 KF_W06 [3/5]
Student can use mathematical formalism to construct and analyze physical models [2F_16_3]
 KF_U09 [3/5]
The participant of the module is able to apply the knowledge acquired in physics when discussing problems from related scientific fields and disciplines [2F_16_4]
 KF_U14 [4/5]
It requires advanced knowledge in quantum mechanics and statistical physics [2F_16_5]
 KF_W03 [3/5]
Type Description Codes of the learning outcomes of the module to which assessment is related
written exam (or oral exam) [2F_16_w_1]
Scope of the material - all topics discussed during the lectures: rating scale (2-5)
 2F_16_1 2F_16_2 2F_16_3 2F_16_4 2F_16_5
report [2F_16_w_2]
Preparation of scientific report via instructions: Abstract or Summary, Materials and methods, Results, Discussion, References, Acnowledgements, Appendices: rating scale (2-5).
 2F_16_1 2F_16_2 2F_16_3 2F_16_4 2F_16_5
activity in class [2F_16_w_3]
Participation and involvement in the discussion at the conversatorium: rating scale (2-5)
 2F_16_1 2F_16_2 2F_16_3 2F_16_4 2F_16_5
Form of teaching Student's own work Assessment of the learning outcomes
Type Description (including teaching methods) Number of hours Description Number of hours
lecture [2F_16_fs_1]
Lecture on selected topics of the physics of semiconductors with audiovisual means
 20
Supplementary literature: working with the textbook “The Physics of Semiconductors”, M.Grundmann, Springer 2006, ISBN-13 978-3-540-25370-9 (E-Book)
 40 written exam (or oral exam) [2F_16_w_1]
discussion classes [2F_16_fs_2]
Independent preparation of selected topics on the current problems of semiconductor physics of nano-devices
 10
Short presentation and discussion coordinated by the tutor. Supplementary literature: “Nanoelectronics and Information Technology” ed.R.Waser, Wiley-VCH 2012, ISBN:978-3-527-40927-3
 20 activity in class [2F_16_w_3]
laboratory classes [2F_16_fs_3]
tutorial-introduction to the issues related to semiconductor materials, the available research methods of their characterization (assisting, supervising, technical support)
 20
planning, carrying out experiments in the UHV laboratory and analyzing the results together with a description in the report based on the knowledge gained during the laboratory classes, lectures and seminars
 30 report [2F_16_w_2]
Attachments
Module description (PDF)
Information concerning module syllabuses might be changed during studies.
Syllabuses (USOSweb)
Semester Module Language of instruction
(no information given)