Physics of Semiconducting Materials
Field of study: Physics
Programme code: W4-S2FZ19.2021

Module name: | Physics of Semiconducting Materials |
---|---|
Module code: | W4-2F-17-18 |
Programme code: | W4-S2FZ19.2021 |
Semester: | summer semester 2021/2022 |
Language of instruction: | English |
Form of verification: | exam |
ECTS credits: | 4 |
Description: | Brief introduction to the crystallographic, electronic structure and lattice dynamics of the most widely used semiconductors and their alloys. Example of some important crystallographic structures for semiconductors: diamond and zinc blende structure. Covalent bonds in semiconductors, the nature of sp3 hybridization for the group IV semiconductor. Electronic defect state, thermodynamics of point defects (Schottky and Frenkel disorder), extended defects. Concentration of carriers as a function of temperature; Fermi distribution/Boltzmann distribution. Intrinsic and doped semiconductors in equilibrium. The role of donors or acceptors at low doping levels. Compensation and amphoteric impurities. Change of the band structure due to high levels of doping. Diffusion of carriers: Fick's first law, Einstein-Smoluchowski relation. Phenomena of electrical transport for intrinsic and doped semiconductors. Mobility of electrons and holes - Hall mobility. Generation and recombination processes. Dependence of the lifetime of the generated carriers on scattering processes. Hetero structure, space charge model. Band bending due to the existence of the surface state. Schottky model of metal-semiconductor contact and metal-oxide-semiconductor interface (solution by Poisson equation). "p-n" junction: an ideal case (solution using Poisson's equation). Determination of the current-voltage characteristics of an ideal p-n junction for forward and reverse current for the electrons and the holes. Applications of semiconductors in nanoelectronics: an example of the use of extended defects and phase change materials for 1 TB resistively switching RAM-s; a concept developed at the Forschungszentrum Juelich and Institute of Physics University of Silesia. |
Prerequisites: | Basic knowledge of solid state physics. |
Key reading: | (no information given) |
Learning outcome of the module | Codes of the learning outcomes of the programme to which the learning outcome of the module is related [level of competence: scale 1-5] |
---|---|
It presupposes an in-depth knowledge of the physics of the condensed phase [2F_18_1] |
KF_W04 [4/5] |
It requires knowledge of mathematical formalism, which is useful in the construction and analysis of physical models of medium complexity and an understanding the consequences of using approximation methods [2F_18_2] |
KF_W06 [3/5] |
Student can use mathematical formalism to construct and analyze physical models [2F_18_3] |
KF_U09 [3/5] |
The participant of the module is able to apply the knowledge acquired in physics when discussing problems from related scientific fields and disciplines [2F_18_4] |
KF_U14 [4/5] |
It requires advanced knowledge in quantum mechanics and statistical physics [2F_18_5] |
KF_W03 [3/5] |
Type | Description | Codes of the learning outcomes of the module to which assessment is related |
---|---|---|
written exam (or oral exam) [2F_18_w_1] | Scope of the material - all topics discussed during the lectures: rating scale (2-5) |
2F_18_1 |
report [2F_18_w_2] | For each experiment performed, a mandatory report containing a theoretical introduction to a given problem, the methodology adopted, description of the study, analysis and discussion of the results and their significance in relation to similar studies |
2F_18_1 |
activity in class [2F_18_w_3] | Participation and involvement in the discussion at the conversatorium: rating scale (2-5) |
2F_18_1 |
Form of teaching | Student's own work | Assessment of the learning outcomes | |||
---|---|---|---|---|---|
Type | Description (including teaching methods) | Number of hours | Description | Number of hours | |
lecture [2F_18_fs_1] | Lecture on selected topics of the physics of semiconductors with audiovisual means |
10 | Supplementary literature: working with the textbook
“The Physics of Semiconductors”, M.Grundmann, Springer 2006, ISBN-13 978-3-540-25370-9 (E-Book) |
20 |
written exam (or oral exam) [2F_18_w_1] |
discussion classes [2F_18_fs_2] | Independent preparation of selected topics on the current problems of semiconductor physics of nano-devices |
10 | Short presentation and discussion coordinated by the tutor.
Supplementary literature:
“Nanoelectronics and Information Technology” ed.R.Waser, Wiley-VCH 2012, ISBN:978-3-527-40927-3 |
20 |
activity in class [2F_18_w_3] |
laboratory classes [2F_18_fs_3] | Taking measurements |
20 | supplementary reading |
20 |
report [2F_18_w_2] |
Attachments |
---|
Module description (PDF) |
Syllabuses (USOSweb) | ||
---|---|---|
Semester | Module | Language of instruction |
(no information given) |